High speed hybrid silicon evanescent electroabsorption modulator.
June 27th, 2008 | by admin |High speed hybrid silicon evanescent electroabsorption modulator.
A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive.
Kuo YH, Chen HW, Bowers JE.
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. yinghao.kuo@ece.ucsb.edu